发明申请
US20120045895A1 SEMICONDUCTOR PACKAGE HAVING THROUGH ELECTRODES THAT REDUCE LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME 有权
具有降低泄漏电流的电极的半导体封装及其制造方法

SEMICONDUCTOR PACKAGE HAVING THROUGH ELECTRODES THAT REDUCE LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME
摘要:
A stacked semiconductor package having through electrodes that exhibit a reduced leakage current and a method of making the same are presented. The stacked semiconductor package includes a semiconductor chip, through-holes, and a current leakage prevention layer. The semiconductor chip has opposing first and second surfaces. The through-holes pass entirely through the semiconductor chip and are exposed at the first and second surfaces. A polarized part is formed on at least one of the first and second surfaces of the semiconductor chip. The through-electrodes are disposed within the through-holes. The current leakage prevention layer covers the polarized part and exposes ends of the through-electrodes.
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