发明申请
- 专利标题: SEMICONDUCTOR PACKAGE HAVING THROUGH ELECTRODES THAT REDUCE LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 具有降低泄漏电流的电极的半导体封装及其制造方法
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申请号: US13286376申请日: 2011-11-01
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公开(公告)号: US20120045895A1公开(公告)日: 2012-02-23
- 发明人: Seung Hee JO , Sung Cheol KIM , Sung Min KIM
- 申请人: Seung Hee JO , Sung Cheol KIM , Sung Min KIM
- 申请人地址: KR Gyeonggi-do
- 专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR10-2009-0073506 20090810
- 主分类号: H01L21/283
- IPC分类号: H01L21/283
摘要:
A stacked semiconductor package having through electrodes that exhibit a reduced leakage current and a method of making the same are presented. The stacked semiconductor package includes a semiconductor chip, through-holes, and a current leakage prevention layer. The semiconductor chip has opposing first and second surfaces. The through-holes pass entirely through the semiconductor chip and are exposed at the first and second surfaces. A polarized part is formed on at least one of the first and second surfaces of the semiconductor chip. The through-electrodes are disposed within the through-holes. The current leakage prevention layer covers the polarized part and exposes ends of the through-electrodes.
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