Disclosed is an integrated thin film photovoltaic device. The integrated thin film photovoltaic device includes: a substrate including trenches formed therein; a first semiconductor material layer formed on the substrate from a first basic line within each of the trenches through one side of each of the trenches to the projected surface of the substrate, which is adjacent to the one side; a second semiconductor material layer formed on a resultant substrate from a second basic line on the first semiconductor material layer within each of the trenches through the other side of each of the trenches to the projected surface of the resultant substrate, which is adjacent to the other side, so that a portion of the first semiconductor material layer and a portion of the second semiconductor material layer are overlapped with each other within each of the trenches.