发明申请
US20120049248A1 TRANSISTORS HAVING A CONTROL GATE AND ONE OR MORE CONDUCTIVE STRUCTURES
有权
具有控制门和一个或多个导电结构的晶体管
- 专利标题: TRANSISTORS HAVING A CONTROL GATE AND ONE OR MORE CONDUCTIVE STRUCTURES
- 专利标题(中): 具有控制门和一个或多个导电结构的晶体管
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申请号: US12872814申请日: 2010-08-31
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公开(公告)号: US20120049248A1公开(公告)日: 2012-03-01
- 发明人: Mike Smith , Henry Jim Fulford
- 申请人: Mike Smith , Henry Jim Fulford
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
Transistors having a dielectric over a semiconductor, a control gate over the dielectric at a particular level, and one or more conductive structures over the dielectric at the particular level facilitate control of device characteristics of the transistor. The one or more conductive structures are between the control gate and at least one source/drain region of the transistor. The one or more conductive structures are electrically isolated from the control gate.