发明申请
US20120049270A1 Method for Forming a Semiconductor Device, and a Semiconductor with an Integrated Poly-Diode
有权
用于形成半导体器件的方法和具有集成多极二极管的半导体
- 专利标题： Method for Forming a Semiconductor Device, and a Semiconductor with an Integrated Poly-Diode
- 专利标题（中）： 用于形成半导体器件的方法和具有集成多极二极管的半导体
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申请号： US12871038申请日： 2010-08-30
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公开(公告)号： US20120049270A1公开(公告)日： 2012-03-01
- 发明人: Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
- 申请人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L21/329
摘要：
A method for forming a field effect power semiconductor is provided. The method includes providing a semiconductor body, a conductive region arranged next to a main surface of the semiconductor body, and an insulating layer arranged on the main horizontal surface. A narrow trench is etched through the insulating layer to expose the conductive region. A polycrystalline semiconductor layer is deposited and a vertical poly-diode structure is formed. The polycrystalline semiconductor layer has a minimum vertical thickness of at least half of the maximum horizontal extension of the narrow trench. A polycrystalline region which forms at least a part of a vertical poly-diode structure is formed in the narrow trench by maskless back-etching of the polycrystalline semiconductor layer. Further, a semiconductor device with a trench poly-diode is provided.
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