发明申请
- 专利标题: Same-Chip Multicharacteristic Semiconductor Structures
- 专利标题(中): 同芯多特征半导体结构
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申请号: US12861976申请日: 2010-08-24
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公开(公告)号: US20120049284A1公开(公告)日: 2012-03-01
- 发明人: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/336
摘要:
In one exemplary embodiment, a semiconductor structure includes: a semiconductor-on-insulator substrate with a top semiconductor layer overlying an insulation layer and the insulation layer overlies a bottom substrate layer; at least one first device at least partially overlying and disposed upon a first portion of the top semiconductor layer, where the first portion has a first thickness, a first width and a first depth; and at least one second device at least partially overlying and disposed upon a second portion of the top semiconductor layer, where the second portion has a second thickness, a second width and a second depth, where at least one of the following holds: the first thickness is greater than the second thickness, the first width is greater than the second width and the first depth is greater than the second depth.
公开/授权文献
- US08492839B2 Same-chip multicharacteristic semiconductor structures 公开/授权日:2013-07-23
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