发明申请
US20120049284A1 Same-Chip Multicharacteristic Semiconductor Structures 有权
同芯多特征半导体结构

Same-Chip Multicharacteristic Semiconductor Structures
摘要:
In one exemplary embodiment, a semiconductor structure includes: a semiconductor-on-insulator substrate with a top semiconductor layer overlying an insulation layer and the insulation layer overlies a bottom substrate layer; at least one first device at least partially overlying and disposed upon a first portion of the top semiconductor layer, where the first portion has a first thickness, a first width and a first depth; and at least one second device at least partially overlying and disposed upon a second portion of the top semiconductor layer, where the second portion has a second thickness, a second width and a second depth, where at least one of the following holds: the first thickness is greater than the second thickness, the first width is greater than the second width and the first depth is greater than the second depth.
公开/授权文献
信息查询
0/0