发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13034264申请日： 2011-02-24
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公开(公告)号： US20120056195A1公开(公告)日： 2012-03-08
- 发明人: Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Makoto Mizukami , Takuma Suzuki , Johji Nishio
- 申请人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Makoto Mizukami , Takuma Suzuki , Johji Nishio
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-198629 20100906
- 主分类号： H01L29/161
- IPC分类号： H01L29/161
摘要：
One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface.
公开/授权文献
- US09029869B2 Semiconductor device 公开/授权日：2015-05-12
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