发明申请
- 专利标题: DEVICE AND METHOD FOR INSPECTING POLYCRYSTALLINE SILICON LAYER
- 专利标题(中): 用于检查多晶硅层的装置和方法
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申请号: US13214272申请日: 2011-08-22
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公开(公告)号: US20120057148A1公开(公告)日: 2012-03-08
- 发明人: Alexander VORONOV , Suk-Ho Lee , Jae-Seung Yoo , Kyung-Hoe Heo , Gyoo-Wan Han
- 申请人: Alexander VORONOV , Suk-Ho Lee , Jae-Seung Yoo , Kyung-Hoe Heo , Gyoo-Wan Han
- 优先权: JP10-2010-0087596 20100907
- 主分类号: G01N21/95
- IPC分类号: G01N21/95 ; G01J3/44 ; G01J4/00 ; G01J3/00
摘要:
A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.
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