公开(公告)号：US08717555B2

公开(公告)日：2014-05-06

申请号：US13214272

申请日：2011-08-22

申请人： Alexander Voronov ,  Suk-Ho Lee ,  Jae-Seung Yoo ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

发明人： Alexander Voronov ,  Suk-Ho Lee ,  Jae-Seung Yoo ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC分类号： G01N21/00

CPC分类号： G01N21/55 ,  G01N21/9505

摘要： A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.

摘要翻译： 用于检查通过在多晶硅层的前侧接收照射的激光而结晶的多晶硅层的装置包括：被配置为向多晶硅层的后侧发射检查光束的光源; 光检查器，被配置为检查在多晶硅层的后侧反射的检查光束; 以及控制光源和光检查器的控制器。

公开(公告)号：US20120057148A1

公开(公告)日：2012-03-08

申请号：US13214272

申请日：2011-08-22

申请人： Alexander VORONOV ,  Suk-Ho Lee ,  Jae-Seung Yoo ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

发明人： Alexander VORONOV ,  Suk-Ho Lee ,  Jae-Seung Yoo ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC分类号： G01N21/95 ,  G01J3/44 ,  G01J4/00 ,  G01J3/00

CPC分类号： G01N21/55 ,  G01N21/9505

摘要： A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.

摘要翻译： 用于检查通过在多晶硅层的前侧接收照射的激光而结晶的多晶硅层的装置包括：被配置为向多晶硅层的后侧发射检查光束的光源; 光检查器，被配置为检查在多晶硅层的后侧反射的检查光束; 以及控制光源和光检查器的控制器。