发明申请
- 专利标题: COMPOUND SEMICONDUCTOR DEPOSITION METHOD AND APPARATUS
- 专利标题(中): 化合物半导体沉积方法和装置
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申请号: US13266337申请日: 2010-04-28
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公开(公告)号: US20120058627A1公开(公告)日: 2012-03-08
- 发明人: Motoichi Ohtsu , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
- 申请人: Motoichi Ohtsu , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
- 申请人地址: JP Kanagawa JP Tokyo
- 专利权人: V TECHNOLOGY CO., LTD.,THE UNIVERSITY OF TOKYO
- 当前专利权人: V TECHNOLOGY CO., LTD.,THE UNIVERSITY OF TOKYO
- 当前专利权人地址: JP Kanagawa JP Tokyo
- 优先权: JP2009-112126 20090501
- 国际申请: PCT/JP2010/003067 WO 20100428
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; B05C9/08
摘要:
Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
公开/授权文献
- US08912079B2 Compound semiconductor deposition method and apparatus 公开/授权日:2014-12-16