发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF
- 专利标题（中）： 半导体结构及其制造方法
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申请号： US13089282申请日： 2011-04-18
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公开(公告)号： US20120061661A1公开(公告)日： 2012-03-15
- 发明人: Po-Tsun Liu , Yi-Teh Chou , Li-Feng Teng , Fu-Hai Li , Han-Ping D. Shieh , Wei-Ting Lin , Ming-Chin Hung , Chun-Ching Hsiao , Jiun-Jye Chang , Po-Lun Chen
- 申请人： Po-Tsun Liu , Yi-Teh Chou , Li-Feng Teng , Fu-Hai Li , Han-Ping D. Shieh , Wei-Ting Lin , Ming-Chin Hung , Chun-Ching Hsiao , Jiun-Jye Chang , Po-Lun Chen
- 申请人地址： TW Hsinchu
- 专利权人： AU OPTRONICS CORPORATION
- 当前专利权人： AU OPTRONICS CORPORATION
- 当前专利权人地址： TW Hsinchu
- 优先权： TW99130916 20100913
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.
公开/授权文献
- US08609460B2 Semiconductor structure and fabricating method thereof 公开/授权日：2013-12-17
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