发明申请
- 专利标题： Memory Devices And Memory Cells
- 专利标题（中）： 内存设备和内存单元
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申请号： US13301921申请日： 2011-11-22
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公开(公告)号： US20120061685A1公开(公告)日： 2012-03-15
- 发明人: Chandra Mouli
- 申请人： Chandra Mouli
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/161
- IPC分类号： H01L29/161
摘要：
A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.
公开/授权文献
- US08415722B2 Memory devices and memory cells 公开/授权日：2013-04-09
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