公开(公告)号：US08723235B2

公开(公告)日：2014-05-13

申请号：US13400442

申请日：2012-02-20

申请人： Chandra Mouli

发明人： Chandra Mouli

IPC分类号： H01L29/812

CPC分类号： H01L29/1608 ,  H01L27/098 ,  H01L29/267 ,  H01L29/66848 ,  H01L29/66916 ,  H01L29/808 ,  H01L29/812 ,  Y10S257/90 ,  Y10S257/902 ,  Y10S257/903

摘要： Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors with a higher diode turn-on voltage. For example, one or more embodiments include a JFET with a doped silicon-carbide gate, while other embodiments include a JFET with a metal gate. One or more embodiments also relate to systems and devices in which the improved JFET may be employed, as well as methods of manufacturing the improved JFET.

摘要翻译： 提供了提供具有改进的操作特性的JFET晶体管的器件和方法。 具体地，本发明的一个或多个实施例涉及具有较高二极管导通电压的JFET晶体管。 例如，一个或多个实施例包括具有掺杂碳化硅栅极的JFET，而其他实施例包括具有金属栅极的JFET。 一个或多个实施例还涉及其中可以使用改进的JFET的系统和装置，以及制造改进的JFET的方法。

公开(公告)号：US08560343B1

公开(公告)日：2013-10-15

申请号：US13367507

申请日：2012-02-07

申请人： Quynh Chieu H. Tran ,  Satya Chandra Mouli Kota ,  Tim McCauley

发明人： Quynh Chieu H. Tran ,  Satya Chandra Mouli Kota ,  Tim McCauley

IPC分类号： G06Q50/00

摘要： A system and method may provide a refill interface and service which allow a customer to order refills of one or more prescription medications in a quick and hassle-free manner from a mobile device. The customer provides prescription data from a barcode image that includes a number associated with an order. The prescription number is received by a server and a pickup store and a pickup time are determined. The user is provided an opportunity to select a new pickup store and/or a new pickup time. The refill system and method provide the service through a series of web pages and/or via an application running on a mobile device.

公开(公告)号：US08481372B2

公开(公告)日：2013-07-09

申请号：US12333012

申请日：2008-12-11

申请人： Chandra Mouli

发明人： Chandra Mouli

IPC分类号： H01L21/337

CPC分类号： H01L27/098 ,  H01L21/22 ,  H01L21/225 ,  H01L21/2251 ,  H01L21/3226 ,  H01L21/385 ,  H01L27/108 ,  H01L27/1203 ,  H01L29/66893 ,  H01L29/66901 ,  H01L29/80 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/8086

摘要： In accordance with the present techniques, there is provided a JFET device structures and methods for fabricating the same. Specifically, there is provided a transistor including a semiconductor substrate having a source and a drain. The transistor also includes a doped channel formed in the semiconductor substrate between the source and the drain, the channel configured to pass current between the source and the drain. Additionally, the transistor has a gate comprising a semiconductor material formed over the channel and dielectric spacers on each side of the gate. The source and the drain are spatially separated from the gate so that the gate is not over the drain and source.

摘要翻译： 根据本技术，提供了一种JFET器件结构及其制造方法。 具体地，提供了包括具有源极和漏极的半导体衬底的晶体管。 晶体管还包括形成在源极和漏极之间的半导体衬底中的掺杂沟道，该沟道被配置为在源极和漏极之间传导电流。 此外，晶体管具有包括在沟道上形成的半导体材料的栅极和栅极每侧上的电介质间隔物。 源极和漏极在空间上与栅极分离，使得栅极不在漏极和源极之上。

公开(公告)号：US20130140631A1

公开(公告)日：2013-06-06

申请号：US13310145

申请日：2011-12-02

申请人： Kamal Karda ,  Chandra Mouli

发明人： Kamal Karda ,  Chandra Mouli

IPC分类号： H01L29/78 ,  H01L21/762 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L21/76224 ,  H01L21/76232 ,  H01L27/10823 ,  H01L27/10844 ,  H01L27/10885 ,  H01L27/10891 ,  H01L29/66666

摘要： A method of formation of an isolation structure for vertical semiconductor devices, the resulting isolation structure, and a memory device to prevent leakage among adjacent vertical semiconductor devices are described.

公开(公告)号：US08455919B2

公开(公告)日：2013-06-04

申请号：US12838803

申请日：2010-07-19

申请人： Suraj J. Mathew ,  Chandra Mouli

发明人： Suraj J. Mathew ,  Chandra Mouli

IPC分类号： H01L21/332 ,  H01L29/66

CPC分类号： H01L29/74

摘要： Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.

摘要翻译： 显示存储器件和制造存储器件的方法。 所示的方法和配置提供用于增加存储器密度的折叠和垂直存储器件。 提供的方法允许存储器阵列中的迹线布线形成在存储器件的表面上或附近。

公开(公告)号：US08404536B2

公开(公告)日：2013-03-26

申请号：US13186822

申请日：2011-07-20

申请人： Chandra Mouli

发明人： Chandra Mouli

IPC分类号： H01L21/18 ,  H01L21/336

CPC分类号： H01L27/11551 ,  H01L21/02529 ,  H01L21/3148 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11568 ,  H01L27/11578 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66795 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/792

摘要： A stacked non-volatile memory device uses amorphous silicon based thin film transistors stacked vertically. Each layer of transistors or cells is formed from a deposited a-Si channel region layer having a predetermined concentration of carbon to form a carbon rich silicon film or silicon carbide film, depending on the carbon content. The dielectric stack is formed over the channel region layer. In one embodiment, the dielectric stack is an ONO structure. The control gate is formed over the dielectric stack. This structure is repeated vertically to form the stacked structure. In one embodiment, the carbon content of the channel region layer is reduced for each subsequently formed layer.

摘要翻译： 堆叠的非易失性存储器件使用垂直堆叠的非晶硅基薄膜晶体管。 晶体管或单元的每个层由具有预定浓度的碳的沉积的a-Si沟道区形成，以形成富含碳的硅膜或碳化硅膜，这取决于碳含量。 电介质堆叠形成在沟道区域层上。 在一个实施例中，电介质叠层是ONO结构。 控制栅极形成在电介质叠层上。 该结构垂直重复以形成堆叠结构。 在一个实施方案中，对于每个随后形成的层，沟道区域层的碳含量降低。

公开(公告)号：US20130009208A1

公开(公告)日：2013-01-10

申请号：US13621002

申请日：2012-09-15

申请人： Suraj J Mathew ,  Chandra Mouli

发明人： Suraj J Mathew ,  Chandra Mouli

IPC分类号： H01L29/74

CPC分类号： H01L29/74

摘要： Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.

摘要翻译： 显示存储器件和制造存储器件的方法。 所示的方法和配置提供用于增加存储器密度的折叠和垂直存储器件。 提供的方法允许存储器阵列中的迹线布线形成在存储器件的表面上或附近。

公开(公告)号：US08304707B2

公开(公告)日：2012-11-06

申请号：US12393812

申请日：2009-02-26

申请人： Ji Soo Lee ,  Jeff A. Mckee ,  Chandra Mouli

发明人： Ji Soo Lee ,  Jeff A. Mckee ,  Chandra Mouli

IPC分类号： H01L27/00

CPC分类号： H01L27/14625 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14643

摘要： A device and method for providing an optical guide of a pixel to guide incoming light to/from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.

摘要翻译： 一种用于提供像素的光导以将来自/来自像素的光转换装置的入射光引导以提高光学串扰抗扰度的装置和方法。 光导包括形成为填充有产生反射的材料的沟槽的光反射势垒。 沟槽填充材料可以具有小于用于沟槽周围层的材料的折射率以提供光反射结构或者沟槽填充材料可以提供反射表面的折射率。

公开(公告)号：US08298846B2

公开(公告)日：2012-10-30

申请号：US12704769

申请日：2010-02-12

申请人： Chandra Mouli ,  Howard E. Rhodes

发明人： Chandra Mouli ,  Howard E. Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A gate conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a layer of indium-tin oxide. The transparent conductor can be biased to reduce the need for a surface dopant in creating a pinned photodiode region. The biasing of the transparent conductor produces a hole-rich accumulation region near the surface of the substrate. The gate conductor material permits a greater amount of charges from short wavelength light to be captured in the photo-sensing region in the substrate, and thereby increases the quantum efficiency of the photosensor.

摘要翻译： 具有改善的短波长光响应的钉扎光电二极管。 在本发明的示例性实施例中，在半导体衬底中的掺杂的掩埋区域上形成栅极氧化物。 栅极导体形成在栅极氧化物的顶部。 栅极导体是透明的，在一个实施例中是一层氧化铟锡。 透明导体可以被偏置以减少在产生钉扎光电二极管区域时对表面掺杂剂的需要。 透明导体的偏压在基板的表面附近产生一个富含孔的堆积区域。 栅极导体材料允许在衬底中的光敏区域中捕获较短波长的光的更大量的电荷，从而提高光电传感器的量子效率。

公开(公告)号：US20120096167A1

公开(公告)日：2012-04-19

申请号：US13079593

申请日：2011-04-04

申请人： James Douglas Free ,  Kenneth Owen Michie ,  Chandra Mouli Ravipati

发明人： James Douglas Free ,  Kenneth Owen Michie ,  Chandra Mouli Ravipati

IPC分类号： G06F15/173

CPC分类号： G06F9/5011 ,  G06F2209/5011

摘要： The present disclosure describes methods and systems for managing resources, for example in connection with call admission control or other communications or transactions in a system. In particular, a plurality of resource pools are established. At least a first or priority resource is associated with a minimum resource amount, while at least a second or normal resource pool is associated with a maximum resource amount. From the system resource pools, allocations are made to each of a plurality of system servers. If a server receives a request for priority resources that cannot be satisfied from the allocation of priority resources made to that server, that server may borrow from an allocation of normal resources. Resources can also be shared between servers. Accordingly, if required resources are not available from an allocation made to a server receiving the request for resources, that server can request resources from another server. In responding to a request to share resources, a server can attempt to fill the request as if the request had originally been made to that server.

摘要翻译： 本公开描述了用于管理资源的方法和系统，例如结合呼叫许可控制或系统中的其他通信或事务。 特别地，建立了多个资源池。 至少第一或优先资源与最小资源量相关联，而至少第二或正常资源池与最大资源量相关联。 从系统资源池中，对多个系统服务器中的每一个进行分配。 如果服务器从对该服务器的优先级资源的分配中收到对于不能满足的优先资源的请求，则该服务器可以从正常资源的分配中借用。 资源也可以在服务器之间共享。 因此，如果从对接收资源请求的服务器的分配中不可用所需的资源，则该服务器可以从另一个服务器请求资源。 在响应共享资源的请求时，服务器可以尝试填充请求，就像最初向该服务器发出请求一样。