发明申请
- 专利标题： SEMICONDUCTOR CHIP WITH REDUNDANT THRU-SILICON-VIAS
- 专利标题（中）： 半导体芯片与冗余硅玻璃
-
申请号： US12878542申请日： 2010-09-09
-
公开(公告)号： US20120061821A1公开(公告)日： 2012-03-15
- 发明人: Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
- 申请人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L23/48 ; H01L21/768
摘要：
A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
公开/授权文献
- US09437561B2 Semiconductor chip with redundant thru-silicon-vias 公开/授权日：2016-09-06