发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE HAVING STACKED STRUCTURE INCLUDING RESISTOR-SWITCHED BASED LOGIC CIRCUIT AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 具有堆叠结构的半导体存储器件，包括基于电阻开关的逻辑电路及其制造方法
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申请号： US13224410申请日： 2011-09-02
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公开(公告)号： US20120063194A1公开(公告)日： 2012-03-15
- 发明人: In-gyu BAEK , Hong-sun HWANG , Hak-soo YU , Chul-woo PARK
- 申请人： In-gyu BAEK , Hong-sun HWANG , Hak-soo YU , Chul-woo PARK
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0086581 20100903
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L45/00
摘要：
Semiconductor memory device having a stacking structure including resistor switch based logic circuits. The semiconductor memory device includes a first conductive line that includes a first line portion and a second line portion, wherein the first line portion and the second line portion are electrically separated from each other by an intermediate region disposed between the first and second line portions, a first variable resistance material film that is connected to the first line portion and stores data, and a second variable resistance material film that controls an electrical connection between the first line portion and the second line portion.
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