发明申请
US20120067717A1 Method of co-sputtering alloys and compounds using a dual C-MAG cathode arrangement and corresponding apparatus
审中-公开
使用双C-MAG阴极布置和相应设备共同溅射合金和化合物的方法
- 专利标题: Method of co-sputtering alloys and compounds using a dual C-MAG cathode arrangement and corresponding apparatus
- 专利标题(中): 使用双C-MAG阴极布置和相应设备共同溅射合金和化合物的方法
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申请号: US12923389申请日: 2010-09-17
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公开(公告)号: US20120067717A1公开(公告)日: 2012-03-22
- 发明人: Anton Dietrich , Kevin O'Connor , Richard Blacker
- 申请人: Anton Dietrich , Kevin O'Connor , Richard Blacker
- 申请人地址: US MI Ann Arbor LU Dudelange
- 专利权人: Guardian Industries Corp.,C.R.V.C.
- 当前专利权人: Guardian Industries Corp.,C.R.V.C.
- 当前专利权人地址: US MI Ann Arbor LU Dudelange
- 主分类号: C23C14/35
- IPC分类号: C23C14/35
摘要:
Certain example embodiments of this invention relate to techniques for sputter-depositing a thin film(s) including two or more materials using targets such as rotating cylindrical sputtering targets, including a method and apparatus. Magnet bar assemblies in first and second adjacent sputtering targets are oriented differently. The different orientations of the magnet bar assemblies allows material from the second target to be sputtered onto the first target, or vice versa. The mixture of material on the first target, including sputtering material from both the first and second targets, is then sputtered onto a substrate to form a sputter-deposited thin film that includes a mixture of the sputtering materials from the targets.