发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US13072366申请日： 2011-03-25
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公开(公告)号： US20120068254A1公开(公告)日： 2012-03-22
- 发明人: Kiwamu SAKUMA , Atsuhiro Kinoshita
- 申请人： Kiwamu SAKUMA , Atsuhiro Kinoshita
- 优先权： JP2010-211271 20100921
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/308
摘要：
According to one embodiment, a memory device includes a semiconductor substrate, first, second, third and fourth fin-type stacked layer structures, each having memory strings stacked in a first direction perpendicular to a surface of the semiconductor substrate, and each extending to a second direction parallel to the surface of the semiconductor substrate, a first part connected to first ends in the second direction of the first and second fin-type stacked layer structures each other, a second part connected to first ends in the second direction of the third and fourth fin-type stacked layer structures each other, a third part connected to second ends in the second direction of the first and third fin-type stacked layer structures each other, and a fourth part connected to second ends in the second direction of the second and fourth fin-type stacked layer structures each other.
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