Invention Application
- Patent Title: AIR GAP FORMATION
- Patent Title (中): 空气隙形成
-
Application No.: US13229673Application Date: 2011-09-10
-
Publication No.: US20120070957A1Publication Date: 2012-03-22
- Inventor: Abhijit Basu Mallick , Nitin Ingle
- Applicant: Abhijit Basu Mallick , Nitin Ingle
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/764
- IPC: H01L21/764

Abstract:
A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
Public/Granted literature
- US08765573B2 Air gap formation Public/Granted day:2014-07-01
Information query
IPC分类: