公开(公告)号：US08980382B2

公开(公告)日：2015-03-17

申请号：US12836991

申请日：2010-07-15

Applicant: Nitin Ingle ,  Abhijit Basu Mallick ,  Earl Osman Solis ,  Nicolay Kovarsky ,  Olga Lyubimova

Inventor： Nitin Ingle ,  Abhijit Basu Mallick ,  Earl Osman Solis ,  Nicolay Kovarsky ,  Olga Lyubimova

IPC: B05D1/34 ,  H05H1/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  H01J37/32 ,  H05H1/46

CPC classification number: C23C16/308 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/56 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32449

Abstract: Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

Abstract translation: 描述形成氧化硅层的方法。 所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。 自由基前体和含硅前体之一含有氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。 自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

公开(公告)号：US20120238102A1

公开(公告)日：2012-09-20

申请号：US13416277

申请日：2012-03-09

Applicant: Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  C09K13/00 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Abstract translation: 从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体 在等离子体产生区域中。 等离子体包括氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

公开(公告)号：US20120196447A1

公开(公告)日：2012-08-02

申请号：US13197487

申请日：2011-08-03

Applicant: Dongqing Yang ,  Jing Tang ,  Nitin Ingle

Inventor： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

IPC: H01L21/3065

CPC classification number: H01L21/31116

Abstract: A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

Abstract translation: 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

公开(公告)号：US08211808B2

公开(公告)日：2012-07-03

申请号：US12551180

申请日：2009-08-31

Applicant: Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

Inventor： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

IPC: H01L21/302

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

Abstract translation: 描述了一种蚀刻含硅和碳的材料的方法，并且包括与活性氧气流组合的SiConi TM蚀刻。 可以在SiConi™蚀刻之前引入活性氧，从而减少近表面区域的碳含量，并允许SiConi™蚀刻进行得更快。 或者，可以在SiConi TM蚀刻期间引入活性氧，进一步提高有效蚀刻速率。

公开(公告)号：US20120070957A1

公开(公告)日：2012-03-22

申请号：US13229673

申请日：2011-09-10

Applicant: Abhijit Basu Mallick ,  Nitin Ingle

Inventor： Abhijit Basu Mallick ,  Nitin Ingle

IPC: H01L21/764

CPC classification number: H01L21/764 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.

Abstract translation: 在衬底上的相邻凸起特征之间形成气隙的方法包括使用可流动沉积工艺在相邻凸起特征之间的底部区域中形成含碳材料。 该方法还包括使用可流动的沉积工艺在含碳材料上形成含硅膜，其中含硅膜填充相邻凸起特征之间的上部区域并在相邻的凸起特征上延伸。 该方法还包括在升高的温度下将含碳材料和含硅材料固化一段时间，以形成相邻凸起特征之间的气隙。

公开(公告)号：US20110151674A1

公开(公告)日：2011-06-23

申请号：US12646030

申请日：2009-12-23

Applicant: JING TANG ,  Nitin Ingle ,  Dongqing Yang

Inventor： JING TANG ,  Nitin Ingle ,  Dongqing Yang

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/3341

Abstract: A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

Abstract translation: 描述了蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有比氟更大或更小的氢流量比的SiConi TM蚀刻。 已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率差异。 降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，保持相对高的衬底温度并在多个步骤中执行SiConi TM。 单独或组合的这些方法中的每一种用于通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

公开(公告)号：US20060030165A1

公开(公告)日：2006-02-09

申请号：US10990002

申请日：2004-11-16

Applicant: Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

Inventor： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

Abstract translation: 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US06843882B2

公开(公告)日：2005-01-18

申请号：US10263556

申请日：2002-10-02

Applicant: Karthik Janakiraman ,  Victor Wang ,  Vikash Banthia ,  Teresa Winson ,  Nitin Ingle

Inventor： Karthik Janakiraman ,  Victor Wang ,  Vikash Banthia ,  Teresa Winson ,  Nitin Ingle

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/00 ,  H01L21/677 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67754 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/6719

Abstract: A system for processing substrates comprises a plurality of process chambers. Each process chamber includes an inlet gas distribution member connected to an inlet gas line to distribute gas from the inlet gas line into the process chamber, and a gas outlet. The inlet gas distribution member has an inlet gas distribution member impedance to a gas flow through the inlet gas distribution member into the process chamber. The plurality of process chambers are substantially identical. A source gas delivery line is connected to the inlet gas lines of the plurality of process chambers to supply a gas flow to be divided into the inlet gas lines. A plurality of tunable upstream gas restrictors are each disposed in one of the inlet gas lines connected to the inlet gas distribution members of the process chambers and are configured to adjust a flow rate into the corresponding process chamber.

Abstract translation: 用于处理衬底的系统包括多个处理室。 每个处理室包括连接到入口气体管线以将气体从入口气体管线分配到处理室中的入口气体分配构件和气体出口。 入口气体分配构件具有入口气体分配构件对通过入口气体分配构件的气体流入处理室的阻抗。 多个处理室基本相同。 源气体输送管线连接到多个处理室的入口气体管线，以供应待分成入口气体管线的气流。 多个可调节的上游气体限制器分别设置在连接到处理室的入口气体分配构件的入口气体管线中的一个中，并且被配置为调节进入相应处理室的流量。

公开(公告)号：US20130048605A1

公开(公告)日：2013-02-28

申请号：US13593412

申请日：2012-08-23

Applicant: Kedar SAPRE ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

Inventor： Kedar SAPRE ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

IPC: B44C1/22

CPC classification number: H01L21/31144 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116

Abstract: A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.

Abstract translation: 蚀刻衬底的方法包括在衬底上形成由氧化硅，氮化硅或氮氧化硅组成的多个双重构图特征。 具有双重图案化特征的基板被提供到处理区域。 包括三氟化氮，氨和氢的蚀刻气体在远程室中通电。 通电的蚀刻气体被引入到工艺区中以蚀刻双重图案化特征以在衬底上形成固体残余物。 固体残余物通过将基底加热至至少约100℃的温度升华。

公开(公告)号：US20120009796A1

公开(公告)日：2012-01-12

申请号：US12909167

申请日：2010-10-21

Applicant: Zhenjiang Cui ,  Anchuan Wang ,  Mehul Naik ,  Nitin Ingle ,  Young Lee ,  Shankar Venkataraman

Inventor： Zhenjiang Cui ,  Anchuan Wang ,  Mehul Naik ,  Nitin Ingle ,  Young Lee ,  Shankar Venkataraman

IPC: H01L21/3065

CPC classification number: H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76814

Abstract: Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is selective towards the oxygen-rich portion of the low-K dielectric layer. The etch rate attenuates as the etch process passes through the relatively high-K oxygen-rich portion and reaches the low-K portion. The etch process may be easily timed since the gas phase etch process does not readily remove the desirable low-K portion.

Abstract translation: 描述了降低集成电路的两个导电部件之间存在的有效介电常数的方法。 该方法包括使用对低K电介质层的富氧部分具有选择性的气相蚀刻。 当蚀刻工艺通过较高K富氧部分并达到低K部分时，蚀刻速率衰减。 由于气相蚀刻工艺不容易除去所需的低K部分，所以蚀刻工艺可以容易地定时。