发明申请
- 专利标题: AIR GAP FORMATION
- 专利标题(中): 空气隙形成
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申请号: US13229673申请日: 2011-09-10
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公开(公告)号: US20120070957A1公开(公告)日: 2012-03-22
- 发明人: Abhijit Basu Mallick , Nitin Ingle
- 申请人: Abhijit Basu Mallick , Nitin Ingle
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/764
- IPC分类号: H01L21/764
摘要:
A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
公开/授权文献
- US08765573B2 Air gap formation 公开/授权日:2014-07-01
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