This disclosure relates to a polishing pad for chemical mechanical polishing, having a shape where 3 or more semi-oval or semicircular curves that connect 2 valleys neighboring on the plane are connected, and including 2 or more modified patterns that are formed to a determined thickness on the polishing pad, wherein a peak of one modified pattern and a valley of another modified pattern neighboring thereto are sequentially located on the same line. The polishing pad may uniformly disperse slurry over the whole area during a polishing process to provide improved polishing uniformity, and appropriately control residence time of the slurry to increase polishing rate.