发明申请
US20120072647A1 Different types of memory integrated in one chip by using a novel protocol
有权
通过使用新颖的协议集成在一个芯片中的不同类型的存储器
- 专利标题: Different types of memory integrated in one chip by using a novel protocol
- 专利标题(中): 通过使用新颖的协议集成在一个芯片中的不同类型的存储器
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申请号: US13200141申请日: 2011-09-19
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公开(公告)号: US20120072647A1公开(公告)日: 2012-03-22
- 发明人: Peter Wung Lee , Fu-Chang Hsu
- 申请人: Peter Wung Lee , Fu-Chang Hsu
- 专利权人: Aplus Flash Technology, Inc.
- 当前专利权人: Aplus Flash Technology, Inc.
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; H05K3/00
摘要:
A semiconductor chip contains four different memory types, EEPROM, NAND Flash, NOR Flash and SRAM, and a plurality of major serial/parallel interfaces such as I2C, SPI, SDI and SQI in one memory chip. The memory chip features write-while-write and read-while-write operations as well as read-while-transfer and write-while-transfer operations. The memory chip provides for eight pins of which two are for power and up to four pins have no connection for specific interfaces and uses a novel unified nonvolatile memory design that allow the integration together of the aforementioned memory types integrated together into the same semiconductor memory chip.
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