发明申请
- 专利标题: EEPROM CELL
- 专利标题(中): EEPROM单元
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申请号: US12888437申请日: 2010-09-23
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公开(公告)号: US20120074483A1公开(公告)日: 2012-03-29
- 发明人: Sung Mun JUNG , Kian Hong LIM , Jianbo YANG , Swee Tuck WOO , Sanford CHU
- 申请人: Sung Mun JUNG , Kian Hong LIM , Jianbo YANG , Swee Tuck WOO , Sanford CHU
- 申请人地址: SG Singapore
- 专利权人: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人地址: SG Singapore
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/336
摘要:
A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area and forming first and second gates of first and second transistors in the cell area. The first gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the first gate are separated by a first intergate dielectric layer. The second gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the second gate are separated by a second intergate dielectric layer. The method also includes forming first and second junctions of the first and second transistors. A first gate terminal is formed and coupled to the second sub-gate of the first transistor. A second gate terminal is formed and coupled to at least the first sub-gate of the second transistor.
公开/授权文献
- US08383476B2 EEPROM cell 公开/授权日:2013-02-26
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