发明申请
US20120074534A1 Semiconductor Device and Method of Forming Protective Structure Around Semiconductor Die for Localized Planarization of Insulating Layer
有权
半导体器件及半导体芯片周围保护结构的形成方法，用于绝缘层的局部平面化
- 专利标题： Semiconductor Device and Method of Forming Protective Structure Around Semiconductor Die for Localized Planarization of Insulating Layer
- 专利标题（中）： 半导体器件及半导体芯片周围保护结构的形成方法，用于绝缘层的局部平面化
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申请号： US12891232申请日： 2010-09-27
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公开(公告)号： US20120074534A1公开(公告)日： 2012-03-29
- 发明人: Yaojian Lin , Xia Feng , Kang Chen , Jianmin Fang
- 申请人： Yaojian Lin , Xia Feng , Kang Chen , Jianmin Fang
- 申请人地址： SG Singapore
- 专利权人： STATS CHIPPAC, LTD.
- 当前专利权人： STATS CHIPPAC, LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/78
摘要：
A semiconductor wafer contains a plurality of semiconductor die separated by a saw street. A contact pad is formed over an active surface of the semiconductor die. A protective pattern is formed over the active surface of the semiconductor die between the contact pad and saw street of the semiconductor die. The protective pattern includes a segmented metal layer or plurality of parallel segmented metal layers. An insulating layer is formed over the active surface, contact pad, and protective pattern. A portion of the insulating layer is removed to expose the contact pad. The protective pattern reduces erosion of the insulating layer between the contact pad and saw street of the semiconductor die. The protective pattern can be angled at corners of the semiconductor die or follow a contour of the contact pad. The protective pattern can be formed at corners of the semiconductor die.
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