发明申请
US20120074562A1 Three-Dimensional Integrated Circuit Structure with Low-K Materials
审中-公开
具有低K材料的三维集成电路结构
- 专利标题： Three-Dimensional Integrated Circuit Structure with Low-K Materials
- 专利标题（中）： 具有低K材料的三维集成电路结构
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申请号： US12890094申请日： 2010-09-24
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公开(公告)号： US20120074562A1公开(公告)日： 2012-03-29
- 发明人: Chen-Hua Yu , Wen-Chih Chiou , Tsang-Jiuh Wu
- 申请人： Chen-Hua Yu , Wen-Chih Chiou , Tsang-Jiuh Wu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L21/762
摘要：
A device includes an interposer free from active devices therein. The interposer includes a substrate; a through-substrate via (TSV) penetrating through the substrate; and a low-k dielectric layer over the substrate.