发明申请
- 专利标题: REFERENCE CURRENT GENERATING CIRCUIT, REFERENCE VOLTAGE GENERATING CIRCUIT, AND TEMPERATURE DETECTION CIRCUIT
- 专利标题(中): 参考电流产生电路,参考电压发生电路和温度检测电路
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申请号: US13243290申请日: 2011-09-23
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公开(公告)号: US20120075007A1公开(公告)日: 2012-03-29
- 发明人: Kazunori Watanabe
- 申请人: Kazunori Watanabe
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2010-215170 20100927
- 主分类号: H03K3/01
- IPC分类号: H03K3/01
摘要:
A reference current generating circuit with high current mirror accuracy is provided by low power supply voltage operation. The reference current generating circuit includes a cascode current mirror circuit 1 outputting mirror currents I1 and I2, and a reference current Iref, a current-voltage converter circuit 2 converting the mirror current I1 into a voltage V1, a current-voltage converter circuit 3 converting the mirror current I2 into a voltage V2, a differential amplifier 4 in which the voltage V1 is input to a first input terminal and the voltage V2 is input to a second input terminal, a voltage-current converter circuit 5 converting a voltage V3 output from the differential amplifier 4 into currents I3 and I4, and a current-voltage converter circuit 6 converting the current I3 into a voltage V4 which is output to a gate of a transistor in the cascode current mirror circuit.
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