发明申请
US20120075918A1 SRAM Having Wordline Up-Level Voltage Adjustable to Assist Bitcell Stability and Design Structure for Same
有权
SRAM具有可调节字节上位电压以协助位单元稳定性和设计结构
- 专利标题： SRAM Having Wordline Up-Level Voltage Adjustable to Assist Bitcell Stability and Design Structure for Same
- 专利标题（中）： SRAM具有可调节字节上位电压以协助位单元稳定性和设计结构
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申请号： US12892160申请日： 2010-09-28
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公开(公告)号： US20120075918A1公开(公告)日： 2012-03-29
- 发明人: Igor Arsovski , John A. Fifield , Robert M. Houle , Harold Pilo
- 申请人： Igor Arsovski , John A. Fifield , Robert M. Houle , Harold Pilo
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C8/08 ; G06F17/50
摘要：
An integrated circuit that includes memory containing wordlines and bitcells having SRAM storage elements and being connected to the wordlines. Wordline up-level assist circuitry is provided that is designed and configured to provide a plurality of selectable voltage values that can be selected to provide the wordline up-level voltage that is provided to the bitcells during a memory read cycle and/or write cycle. In one example, the voltage value selected is selected based on characterization of the as-fabricated bitcells so as to decrease the likelihood of the bitcells experiencing a stability failure.