发明申请
- 专利标题： Suppression Of Crystal Growth Instabilities During Production Of Rare-Earth Oxyorthosilicate Crystals
- 专利标题（中）： 在稀土氧化硅酸盐晶体生产过程中抑制晶体生长不稳定性
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申请号： US12894494申请日： 2010-09-30
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公开(公告)号： US20120080645A1公开(公告)日： 2012-04-05
- 发明人: Mark S. Andreaco , A. Andrew Carey , Piotr Szupryczynski
- 申请人： Mark S. Andreaco , A. Andrew Carey , Piotr Szupryczynski
- 申请人地址： US PA Malvern
- 专利权人： SIEMENS MEDICAL SOLUTIONS USA, INC.
- 当前专利权人： SIEMENS MEDICAL SOLUTIONS USA, INC.
- 当前专利权人地址： US PA Malvern
- 主分类号： C30B15/02
- IPC分类号： C30B15/02 ; C09K11/06
摘要：
Disclosed are a method of growing a rare-earth oxyorthosilicate crystal and a crystal grown using the method. A melt is prepared by melting a first substance including at least one rare-earth element and a second substance including at least one element from group 7 of the periodic table. A seed crystal is brought into contact with the surface of the melt and withdrawn to grow the crystal.