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1.发明申请公开(公告)号：US20250019862A1
公开(公告)日：2025-01-16
申请号：US18902914
申请日：2024-09-30
Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Inventor： Yu WANG , Weiming GUAN , Min LI
Abstract: The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.
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公开(公告)号：US12146236B2
公开(公告)日：2024-11-19
申请号：US17831271
申请日：2022-06-02
Applicant: GlobalWafers Co., Ltd.
Inventor： Matteo Pannocchia , Francesca Marchese , Paolo Tosi
Abstract: Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on the silicon melt. When silicon is added to the outer melt zone to replenish the melt during ingot growth, the silicon contacts the plates rather than falling directly into the melt in the outer melt zone. The silicon melts and falls through openings that extend through the thickness of the plates.
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3.发明公开公开(公告)号：US20240247399A1
公开(公告)日：2024-07-25
申请号：US18040098
申请日：2022-11-28
Inventor： Xiaodong LI , Lei AN
CPC classification number: C30B15/02 , C30B15/002 , C30B15/20 , C30B29/06
Abstract: The present disclosure provides raw material re-feeding apparatus and monocrystal manufacturing apparatus having the same. The raw material re-feeding apparatus includes a charger body, a storage, a fixed conveyer, a mobile conveyer, and a switching device. The fixed conveyer and the storage are disposed in the charger body, and the fixed conveyer is disposed at a discharging end of the storage for conveying materials. A charging end of the mobile conveyer is aligned with a discharging end of the fixed conveyer, and the mobile conveyer is movable relative to a monocrystal furnace, so that materials flowing out of the fixed conveyer can fall onto the mobile conveyer. The switching device is connected to the charger body and the monocrystal furnace for achieving connection/disconnection between the charger body and the monocrystal furnace.
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公开(公告)号：US20240052523A1
公开(公告)日：2024-02-15
申请号：US18494746
申请日：2023-10-25
Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Inventor： Yu WANG , Weiming GUAN , Min LI
CPC classification number: C30B29/22 , C01B33/20 , C30B15/02 , C01P2002/52 , C01F17/00
Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.
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公开(公告)号：US11827826B2
公开(公告)日：2023-11-28
申请号：US17647974
申请日：2022-01-13
Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Inventor： Yu Wang , Weiming Guan , Min Li
CPC classification number: C09K11/7774 , C30B15/02 , C30B29/22
Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.
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Patent Agency Ranking
公开(公告)号：US11739436B2
公开(公告)日：2023-08-29
申请号：US17038591
申请日：2020-09-30
Inventor： Jun Yang , Weize Shang , Xiaolong Bai
CPC classification number: C30B15/002 , C30B15/005 , C30B15/02 , C30B15/12 , C30B15/22 , C30B29/06
Abstract: Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ≥1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.
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公开(公告)号：US11655557B2
公开(公告)日：2023-05-23
申请号：US17216659
申请日：2021-03-29
Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Inventor： Yu Wang , Weiming Guan , Zhenxing Liang , Min Li
CPC classification number: C30B15/02 , C30B15/10 , C30B15/14 , C30B15/22 , C30B29/22 , C30B29/28 , C30B29/34
Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.
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公开(公告)号：US20230142194A1
公开(公告)日：2023-05-11
申请号：US17964303
申请日：2022-10-12
Applicant: GlobalWafers Co., Ltd.
Inventor： Richard Joseph Phillips , Carissima Marie Hudson
CPC classification number: C30B15/02 , C30B15/12 , C30B15/002 , C30B29/06
Abstract: Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array may be made of quartz particles that are interconnected by linking members.
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公开(公告)号：US20230055938A1
公开(公告)日：2023-02-23
申请号：US17797073
申请日：2020-09-10
Inventor： Lijie FU , Niefeng SUN , Shujie WANG , Xiaolan LI , Xin ZHANG , Xiaodan ZHANG , Yanlei SHI , Huimin SHAO , Yang WANG
Abstract: The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.
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公开(公告)号：US20230042620A1
公开(公告)日：2023-02-09
申请号：US17879218
申请日：2022-08-02
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Naofumi Shinya , Norio Yamagata , Yu Hamaguchi , Takehisa Minowa
Abstract: In SiC single crystal production by the solution process, an alloy of silicon (Si) and a metallic element M that increases the solubility of carbon (C) is pre-impregnated into a SiC sintered body having a relative density of 50 to 90%, following which Si and M are placed in a SiC crucible made of the SiC sintered body and the Si and M within the SiC crucible are melted, forming a Si—C solution. With heating, SiC from the SiC sintered body dissolves into the Si—C solution, efficiently supplying Si and C to the Si—C solution. As a result, Si and C are supplied uniformly and in the proper amount from all areas of contact between the SiC crucible and the Si—C solution, enabling a high-quality SiC single crystal to be stably produced over a long time at a rapid growth rate.
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