Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US12894189Application Date: 2010-09-30
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Publication No.: US20120080795A1Publication Date: 2012-04-05
- Inventor: Gerald DALLMANN , Dirk MEINHOLD , Alfred VATER
- Applicant: Gerald DALLMANN , Dirk MEINHOLD , Alfred VATER
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768
Abstract:
One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.
Public/Granted literature
- US08580687B2 Semiconductor structure and method for making same Public/Granted day:2013-11-12
Information query
IPC分类:
