Invention Application
US20120083088A1 INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AND METHOD OF MANUFACTURING SAME
有权
具有良好控制的表面接近度的集成电路装置及其制造方法
- Patent Title: INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AND METHOD OF MANUFACTURING SAME
- Patent Title (中): 具有良好控制的表面接近度的集成电路装置及其制造方法
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Application No.: US13240025Application Date: 2011-09-22
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Publication No.: US20120083088A1Publication Date: 2012-04-05
- Inventor: Ming-Hsuan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
- Applicant: Ming-Hsuan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.
Public/Granted literature
- US08614132B2 Integrated circuit device with well controlled surface proximity and method of manufacturing same Public/Granted day:2013-12-24
Information query
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