发明申请
- 专利标题： SEMICONDUCTOR LIGHT-EMITTING STRUCTURE HAVING LOW THERMAL STRESS
- 专利标题（中）： 具有低热应力的半导体发光结构
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申请号： US13171472申请日： 2011-06-29
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公开(公告)号： US20120086032A1公开(公告)日： 2012-04-12
- 发明人: SHIH-CHENG HUANG , PO-MIN TU , SHUN-KUEI YANG , CHIA-HUNG HUANG
- 申请人： SHIH-CHENG HUANG , PO-MIN TU , SHUN-KUEI YANG , CHIA-HUNG HUANG
- 申请人地址： TW Hsinchu Hsien
- 专利权人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人地址： TW Hsinchu Hsien
- 优先权： CN201010502906.5 20101011
- 主分类号： H01L33/60
- IPC分类号： H01L33/60
摘要：
A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.
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