发明申请
- 专利标题： HIGH VOLTAGE MOS DEVICE AND METHOD FOR MAKING THE SAME
- 专利标题（中）： 高电压MOS器件及其制造方法
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申请号： US12899152申请日： 2010-10-06
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公开(公告)号： US20120086052A1公开(公告)日： 2012-04-12
- 发明人: Chieh-Chih Chen , Cheng-Chi Lin , Chen-Yuan Lin , Shih-Chin Lien , Shyi-Yuan Wu
- 申请人： Chieh-Chih Chen , Cheng-Chi Lin , Chen-Yuan Lin , Shih-Chin Lien , Shyi-Yuan Wu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A high-voltage metal-oxide-semiconductor (HVMOS) device may include a source, a drain, a gate positioned proximate to the source, a drift region disposed substantially between the drain and a region of the gate and the source, and a self shielding region disposed proximate to the drain. A corresponding method is also provided.
公开/授权文献
- US08749016B2 High voltage MOS device and method for making the same 公开/授权日：2014-06-10
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