利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.016 秒)

    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体结构及其制造方法

    公开(公告)号：US20130265102A1

    公开(公告)日：2013-10-10

    申请号：US13442340

    申请日：2012-04-09

    申请人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Ching-Lin Chan ,  Shih-Chin Lien ,  Shyi-Yuan Wu

    发明人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Ching-Lin Chan ,  Shih-Chin Lien ,  Shyi-Yuan Wu

    IPC分类号： H01L29/808 ,  G11C5/14 ,  H01L21/337

    CPC分类号： H01L29/66901 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/1066 ,  H01L29/808

    摘要： A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type formed in the deep well and extending down from the surface of the substrate; and a second well having the second conductive type formed in the deep well and extending down from the surface of the substrate, and the second well adjacent to the first well. The first well includes a block region and plural finger regions joined to one side of the block region, while the second well includes plural channel regions interlaced with the finger regions to separate the finger regions.

    摘要翻译： 提供了半导体结构及其制造方法。 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 第一阱具有形成在深阱中并从衬底表面向下延伸的第一导电类型; 以及第二阱，其具有形成在深阱中并从衬底的表面向下延伸的第二导电类型，以及与第一阱相邻的第二阱。 第一阱包括连接到块区域的一侧的块区域和多个指状区域，而第二阱包括与手指区域交织的多个沟道区域以分离手指区域。

    Semiconductor structure and method for forming the same
    4.
    发明授权
    Semiconductor structure and method for forming the same 有权
    半导体结构及其形成方法

    公开(公告)号：US08872222B2

    公开(公告)日：2014-10-28

    申请号：US13405001

    申请日：2012-02-24

    申请人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien

    发明人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien

    IPC分类号： H01L29/739 ,  H01L21/331

    CPC分类号： H01L21/22 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/66325 ,  H01L29/66674 ,  H01L29/66689 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/861

    摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a doped strip and a top doped region. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The doped strip is formed in the first doped region and has the second type conductivity. The top doped region is formed in the doped strip and has the first type conductivity. The top doped region has a first sidewall and a second sidewall opposite to the first sidewall. The doped strip is extended beyond the first sidewall or the second sidewall.

    摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括第一掺杂区，第二掺杂区，掺杂条和顶掺杂区。 第一掺杂区域具有第一类型的导电性。 第二掺杂区域形成在第一掺杂区域中并且具有与第一类型导电性相反的第二类型导电性。 掺杂条形成在第一掺杂区中，具有第二类型的导电性。 顶部掺杂区形成在掺杂条中，具有第一类型的导电性。 顶部掺杂区域具有与第一侧壁相对的第一侧壁和第二侧壁。 掺杂的带延伸超过第一侧壁或第二侧壁。

    HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE
    6.
    发明申请
    HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE 审中-公开
    高电压半导体器件及制造高电压半导体器件的方法

    公开(公告)号：US20120292740A1

    公开(公告)日：2012-11-22

    申请号：US13111563

    申请日：2011-05-19

    申请人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh

    发明人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh

    IPC分类号： H01L29/02 ,  H01L21/02

    CPC分类号： H01L28/20 ,  H01L27/0676 ,  H01L27/0802 ,  H01L29/0692 ,  H01L29/8605

    摘要： A semiconductor device comprises a semiconductor substrate, a lateral semiconductor diode, a field insulation structure, and a polysilicon resistor. The diode is formed in a surface region of the semiconductor substrate, and includes a cathode electrode and an anode electrode. The field insulation structure is disposed between the cathode and anode electrodes. The polysilicon resistor is formed over the field insulation structure, and between the cathode and anode electrodes. The polysilicon resistor is electrically connected to the cathode electrode, and electrically insulated from the anode electrode.

    摘要翻译： 半导体器件包括半导体衬底，横向半导体二极管，场绝缘结构和多晶硅电阻器。 二极管形成在半导体衬底的表面区域中，并且包括阴极电极和阳极电极。 场绝缘结构设置在阴极和阳极之间。 多晶硅电阻器形成在场绝缘结构之上，并且在阴极和阳极之间。 多晶硅电阻器电连接到阴极电极，并与阳极电极电绝缘。

    Ultra-High Voltage N-Type-Metal-Oxide-Semiconductor (UHV NMOS) Device and Methods of Manufacturing the same
    8.
    发明申请
    Ultra-High Voltage N-Type-Metal-Oxide-Semiconductor (UHV NMOS) Device and Methods of Manufacturing the same 有权
    超高压N型金属氧化物半导体（UHV NMOS）器件及其制造方法

    公开(公告)号：US20120241861A1

    公开(公告)日：2012-09-27

    申请号：US13070819

    申请日：2011-03-24

    申请人： Chieh-Chih Chen ,  Cheng-Chi Lin ,  Chen-Yuan Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu

    发明人： Chieh-Chih Chen ,  Cheng-Chi Lin ,  Chen-Yuan Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/66477 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： An ultra-high voltage n-type-metal-oxide-semiconductor (UHV NMOS) device with improved performance and methods of manufacturing the same are provided. The UHV NMOS includes a substrate of P-type material; a first high-voltage N-well (HVNW) region disposed in a portion of the substrate; a source and bulk p-well (PW) adjacent to one side of the first HVNW region, and the source and bulk PW comprising a source and a bulk; a gate extended from the source and bulk PW to a portion of the first HVNW region, and a drain disposed within another portion of the first HVNW region that is opposite to the gate; a P-Top layer disposed within the first HVNW region, the P-Top layer positioned between the drain and the source and bulk PW; and an n-type implant layer formed on the P-Top layer.

    摘要翻译： 提供了具有改进性能的超高电压n型金属氧化物半导体（UHV NMOS）器件及其制造方法。 UHV NMOS包括P型材料的衬底; 设置在所述基板的一部分中的第一高压N阱（HVNW）区域; 与第一HVNW区域的一侧相邻的源极和体积p阱（PW），源极和体积PW包括源极和体积; 从源极和体积PW延伸到第一HVNW区域的一部分的栅极，以及设置在与栅极相对的第一HVNW区域的另一部分内的漏极; 设置在第一HVNW区域内的P顶层，位于漏极与源极和体PW之间的P顶层; 以及形成在P顶层上的n型注入层。

    Portable toilet with a surrounding shield
    9.
    发明授权
    Portable toilet with a surrounding shield 失效
    便携式厕所与周围的盾牌

    公开(公告)号：US5448785A

    公开(公告)日：1995-09-12

    申请号：US301640

    申请日：1994-09-07

    申请人： Chen-Yuan Lin

    发明人： Chen-Yuan Lin

    IPC分类号： A47K11/00 ,  A47K11/06

    CPC分类号： A47K11/00

    摘要： A portable toilet comprising a toilet bowl and a paper-made surrounding shield. The surrounding shield is made from a rectangular paper board which has three folding lines dividing the paper board into four equal quarters serving as two lateral walls, a door board and a rear wall of the surrounding shield. An upper half of each folding line is cut open to form a fissure. The paper board further has a transverse middle folding line at which an upper half of each quarter can be folded outward. A male and female fastening belt set is disposed at each fissure to support the four walls upright. A male and female fastening belt set is disposed at the door board of the surrounding shield for closing the door board. The toilet bowl is made by means of cutting a hard thick paper board into a square body with four close faces. Reinforcing ribs are disposed on outer faces of the four walls for strengthening the toilet bowl. Two hook members are disposed on inner faces of the toilet bowl for hooking a plastic bag to contain excretion. A seat pad board integrally extends from upper edge of each of two opposite walls and is cut with arch notch to suit the hip portion of a user. The seat pad board is foldable toward the other to be supported on the upper edges of the other two opposite walls for the user to sit thereon.

    摘要翻译： 一种便携式马桶，包括马桶和纸制围巾。 周围的屏蔽由矩形纸板制成，该纸板具有三个折叠线，将纸板分成用作两个侧壁的四个相等的四分之一，门板和周围屏蔽的后壁。 每个折叠线的上半部分被切开以形成裂缝。 纸板还具有横向中间折叠线，每个四分之一的上半部可以向外折叠。 在每个裂缝处设置雄性和雌性紧固带组，以支撑四个直立的墙壁。 一个公和母紧固带组被设置在周围屏蔽的门板上，用于封闭门板。 厕所碗通过将硬厚纸板切成四面孔的方形体制成。 加强肋设置在四个壁的外表面上，以加强马桶。 两个钩构件设置在马桶的内表面上，用于钩住塑料袋以容纳排泄物。 座垫板一体地从两个相对的壁的每个的上边缘延伸，并且被切割成弧形凹口以适应使用者的臀部。 座垫板可朝向另一侧折叠以支撑在另外两个相对的壁的上边缘上，供使用者坐在其上。