发明申请
- 专利标题： SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL TRANSISTOR AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 具有垂直通道晶体管的半导体器件及其制造方法
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申请号： US13097343申请日： 2011-04-29
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公开(公告)号： US20120086065A1公开(公告)日： 2012-04-12
- 发明人: Daeik KIM , Yongchul Oh , Yoosang Hwang , Hyun-Woo Chung , Young-Seung Cho
- 申请人： Daeik KIM , Yongchul Oh , Yoosang Hwang , Hyun-Woo Chung , Young-Seung Cho
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2010-0098119 20101008
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
Provided is a semiconductor device having a vertical channel transistor and method of fabricating the same. The semiconductor device includes first and second field effect transistors, wherein a channel region of the first field effect transistor serves as source/drain electrodes of the second field effect transistor, and a channel region of the second field effect transistor serves as source/drain electrodes of the first field effect transistor.
公开/授权文献
- US08384141B2 Semiconductor device with vertical channel transistor 公开/授权日：2013-02-26
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