发明申请
- 专利标题: SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
- 专利标题(中): 固态成像装置,制造固态成像装置的方法和电子装置
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申请号: US13249825申请日: 2011-09-30
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公开(公告)号: US20120086845A1公开(公告)日: 2012-04-12
- 发明人: Takayuki Enomoto , Hideaki Togashi
- 申请人: Takayuki Enomoto , Hideaki Togashi
- 申请人地址: JP Tokyo
- 专利权人: SONY CORPORATION
- 当前专利权人: SONY CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-227757 20101007
- 主分类号: H04N5/335
- IPC分类号: H04N5/335 ; H01L31/18 ; H01L27/14
摘要:
A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.
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