摘要:
A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.
摘要:
A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.
摘要:
A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.
摘要:
A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.
摘要:
A support for enzyme immobilization is described, which is for immobilizing enzymes of various molecular sizes and also for, due to the modification of the surface silanol groups of porous silica particles, for immobilizing various kinds of enzymes, and enables the design of an immobilized enzyme, which exhibits an activity equivalent to that of the corresponding non-immobilized enzyme and withstands repeated use. A method for producing the support is also described. The support includes porous silica particles having an interparticle void structure therein, characterized in that the porous silica particles have a specific average particle size, a specific surface area, a specific pore volume, a specific pore size distribution and a specific porosity and have a substituent containing an organic group or an amino group on the surface thereof. An immobilized protein obtained by immobilizing a protein on the above support is also described.
摘要:
A solid-state imaging device includes: a substrate which is formed of a semiconductor and includes a first surface and a second surface which face opposite sides; a gate insulation film which is formed on a trench formed in the substrate to penetrate the first surface and the second surface; and a gate electrode which is embedded in the trench through the gate insulation film to be exposed to a second surface side of the substrate. A step difference is formed from the second surface of the substrate to a tip end surface of the gate electrode on the second surface side.
摘要:
It is an object of the present invention to provide: a protein refolding column filler, which is effective for the refolding, namely, the activation of the function, of an inactive protein with an as yet unformed higher order structure produced in Escherichia coli or the like, or a protein whose conformation has been changed due to a certain cause and which has become inactivated; and a column filled with the aforementioned column filler. The present invention provides a protein refolding column filler, which comprises zeolite with BEA structure (Zeolite Beta) that is granulated into a particle state.
摘要:
A solid-state imaging device includes: a substrate which is formed of a semiconductor and includes a first surface and a second surface which face opposite sides; a gate insulation film which is formed on a trench formed in the substrate to penetrate the first surface and the second surface; and a gate electrode which is embedded in the trench through the gate insulation film to be exposed to a second surface side of the substrate. A step difference is formed from the second surface of the substrate to a tip end surface of the gate electrode on the second surface side.
摘要:
It is an object of the present invention to provide: a protein refolding column filler, which is effective for the refolding, namely, the activation of the function, of an inactive protein with an as yet unformed higher order structure produced in Escherichia coli or the like, or a protein whose conformation has been changed due to a certain cause and which has become inactivated; and a column filled with the aforementioned column filler. The present invention provides a protein refolding column filler, which comprises zeolite with BEA structure (Zeolite Beta) that is granulated into a particle state.
摘要:
A roll-over valve includes a valve body wherein a raised seat portion which a position sensitive ball rests on is disposed below an inlet opening via which fuel vapors enter into the valve body chamber. A ball follower has a top member disposed below the inlet opening and adapted to close the inlet upon being moved toward the inlet by the ball.