发明申请
US20120087052A1 Method and Structure for Detecting an Overcurrent in a Triac
有权
用于检测三端双向可控硅开关中的过电流的方法和结构
- 专利标题： Method and Structure for Detecting an Overcurrent in a Triac
- 专利标题（中）： 用于检测三端双向可控硅开关中的过电流的方法和结构
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申请号： US13242928申请日： 2011-09-23
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公开(公告)号： US20120087052A1公开(公告)日： 2012-04-12
- 发明人: Jan Dreser , Laurent Gonthier
- 申请人： Jan Dreser , Laurent Gonthier
- 申请人地址： CZ Praha 8 FR Tours
- 专利权人： STMicroelectronics Design & Application sro,STMicroelectronics (Tours) SAS
- 当前专利权人： STMicroelectronics Design & Application sro,STMicroelectronics (Tours) SAS
- 当前专利权人地址： CZ Praha 8 FR Tours
- 优先权： EP10306087.7 20101006
- 主分类号： H02H3/08
- IPC分类号： H02H3/08 ; G01R19/00
摘要：
A method comprising: a) during at least part of a conduction phase of the triac, measuring the gate potential of the triac; and b) comparing a value based on said measurement with a reference threshold and deducing the presence or the absence of an overcurrent based on said comparison.
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