公开(公告)号：US20120087052A1

公开(公告)日：2012-04-12

申请号：US13242928

申请日：2011-09-23

Applicant: Jan Dreser ,  Laurent Gonthier

Inventor： Jan Dreser ,  Laurent Gonthier

IPC: H02H3/08 ,  G01R19/00

CPC classification number: G01R19/16571

Abstract: A method comprising: a) during at least part of a conduction phase of the triac, measuring the gate potential of the triac; and b) comparing a value based on said measurement with a reference threshold and deducing the presence or the absence of an overcurrent based on said comparison.

Abstract translation: 一种方法，包括：a）在三端双向串联的传导阶段的至少一部分期间，测量三端双向可控硅开关元件的栅极电位; 以及b）将基于所述测量的值与参考阈值进行比较，并且基于所述比较推断过电流的存在或不存在。

公开(公告)号：US09019675B2

公开(公告)日：2015-04-28

申请号：US13242928

申请日：2011-09-23

Applicant: Jan Dreser ,  Laurent Gonthier

Inventor： Jan Dreser ,  Laurent Gonthier

IPC: H02H3/08 ,  H02H9/02 ,  G01R19/165

CPC classification number: G01R19/16571

Abstract: A method comprising: a) during at least part of a conduction phase of the triac, measuring the gate potential of the triac; and b) comparing a value based on said measurement with a reference threshold and deducing the presence or the absence of an overcurrent based on said comparison.

Abstract translation: 一种方法，包括：a）在三端双向串联的传导阶段的至少部分期间，测量三端双向可控硅开关元件的栅极电位; 以及b）将基于所述测量的值与参考阈值进行比较，并且基于所述比较推断过电流的存在或不存在。