发明申请
- 专利标题： ATOMIC LAYER DEPOSITION ENCAPSULATION FOR ACOUSTIC WAVE DEVICES
- 专利标题（中）： 用于声波设备的原子层沉积封装
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申请号： US13232319申请日： 2011-09-14
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公开(公告)号： US20120091855A1公开(公告)日： 2012-04-19
- 发明人: Merrill Albert Hatcher, JR. , Jayanti Jaganatha Rao , John Robert Siomkos
- 申请人： Merrill Albert Hatcher, JR. , Jayanti Jaganatha Rao , John Robert Siomkos
- 申请人地址： US NC Greensboro
- 专利权人： RF MICRO DEVICES, INC.
- 当前专利权人： RF MICRO DEVICES, INC.
- 当前专利权人地址： US NC Greensboro
- 主分类号： H01L41/04
- IPC分类号： H01L41/04 ; B05D5/00 ; C23C16/44
摘要：
Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
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