摘要:
An architecture for a radio frequency (RF) front-end is disclosed. The architecture for the RF front-end includes a circuit module that includes a plurality of dies partitioned on the circuit module. A plurality of filter banks with individual ones of the plurality of filter banks disposed on each of the plurality of circuit dies is also included. Further included is a plurality of switches having individual ones of the plurality of switches coupled to corresponding ones of the plurality of filter banks and in at least one embodiment a control system is configured to open and close selected ones of the plurality of switches.
摘要:
An amplifier circuit (20) uses a series transistor (38) to couple the output of an amplifier (26) to a tuned circuit load (40) and to act as a variable resistance. In one embodiment for a multi-band receiver, multiple series transistors (38, 42) are switched for connecting different tuned circuits (40, 44) to the amplifier's output, and an activated one of the series transistors receives a gate voltage that varies its resistance so as to achieve gain control. An activated series transistors can also provide a resistance that stabilizes the amplifier (26).
摘要:
The present disclosure is related to an electronic assembly in a stacked configuration. Electronic components are formed on substrates at each level of the stacked configuration. Electromagnetic shield compartments may be provided which substantially encapsulate the electronic components. Conductive vias are formed within the substrates on each level of the stacked configuration and coupled to one another so that the electromagnetic shields at each level of the stack can couple to a common node.
摘要:
Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
摘要翻译:功率放大器和在功率放大器上涂覆氧化铝保护膜(Al 2 O 3)的方法在此公开。 通过原子层沉积(ALD)工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。 因此,ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。
摘要:
The present disclosure is related to an electronic assembly in a stacked configuration. Electronic components are formed on substrates at each level of the stacked configuration. Electromagnetic shield compartments may be provided which substantially encapsulate the electronic components. Conductive vias are formed within the substrates on each level of the stacked configuration and coupled to one another so that the electromagnetic shields at each level of the stack can couple to a common node.
摘要:
A dual channel receiver (100) includes a front end bandpass filter (120) that has a front end bandwidth, a first mixer (130), a second mixer (135), and two essentially identical receiver back ends (190, 195). The front end bandpass filter splits a received signal into a first signal (121) and a second signal (122) of essentially equal signal strengths and provides out of band isolation between first and second signal outputs (123, 124). The first mixer is coupled to the first signal and to a high side injection signal (131), and generates a first mixer output signal (132). The second mixer is coupled to the second signal and to a low side injection signal (136), and generates a second mixer output signal (137). Each of the two essentially identical receiver back ends is coupled to one of the first and second mixer output signals.
摘要:
Embodiments include devices and methods for manufacturing a module having a first shielded compartment and a second shielded compartment, wherein the first shielded compartment is electrically isolated from the second shielded compartment. Electrical conductivity is controlled in a manner in which current flow between shielded circuits is directed to reduce or eliminate energy from being coupled between one or more shielded compartments on the same module. Each module may have a plurality of individual shielded compartments, where each compartment has a dedicated ground plane. The shields for each compartment may be tied to the dedicated ground plane of the compartment. Because the dedicated ground planes are not tied together, each of the shielded compartments on the modules remains isolated from all the other shielded compartments on the modules. In some embodiments having a plurality of shielded compartments, there is at least one isolated shielded compartment depending upon the design needs of the module.
摘要:
Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
摘要:
An architecture for a radio frequency (RF) front-end is disclosed. The architecture for the RF front-end includes a circuit module that includes a plurality of dies partitioned on the circuit module. A plurality of filter banks with individual ones of the plurality of filter banks disposed on each of the plurality of circuit dies is also included. Further included is a plurality of switches having individual ones of the plurality of switches coupled to corresponding ones of the plurality of filter banks and in at least one embodiment a control system is configured to open and close selected ones of the plurality of switches.
摘要:
Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
摘要翻译:功率放大器和在功率放大器上涂覆氧化铝保护膜(Al 2 O 3)的方法在此公开。 通过原子层沉积(ALD)工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。 因此,ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。