A TFT including a gate, a gate insulation layer, an oxide semiconductor layer, a translucent layer, a source, and a drain. The gate insulation layer covers the gate. The oxide semiconductor layer is disposed on the gate insulation layer and located above the gate. The oxide semiconductor layer includes an oxide channel layer and two ohmic contact layers. The ohmic contact layers are respectively located beside the oxide channel layer and connected with the oxide channel layer. The translucent layer is located above the oxide channel layer. The source and the drain are disposed on the gate insulation layer and the ohmic contact layers. The source and the drain are electrically insulated from each other.