发明申请
- 专利标题: LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 发光二极管芯片及其制造方法
-
申请号: US13214254申请日: 2011-08-22
-
公开(公告)号: US20120097976A1公开(公告)日: 2012-04-26
- 发明人: PO-MIN TU , SHIH-CHENG HUANG , SHUN-KUEI YANG , CHIA-HUNG HUANG
- 申请人: PO-MIN TU , SHIH-CHENG HUANG , SHUN-KUEI YANG , CHIA-HUNG HUANG
- 申请人地址: TW Hsinchu Hsien
- 专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人地址: TW Hsinchu Hsien
- 优先权: CN201010513661.6 20101020
- 主分类号: H01L33/02
- IPC分类号: H01L33/02 ; H01L33/60
摘要:
A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.
公开/授权文献
信息查询
IPC分类: