Invention Application
- Patent Title: SCHOTTKY RECTIFIER
- Patent Title (中): 肖特基整流器
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Application No.: US13222249Application Date: 2011-08-31
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Publication No.: US20120098082A1Publication Date: 2012-04-26
- Inventor: Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
- Applicant: Chih-Wei HSU , Florin UDREA , Yih-Yin LIN
- Applicant Address: US NY Hauppauge
- Assignee: VISHAY GENERAL SEMICONDUCTOR LLC
- Current Assignee: VISHAY GENERAL SEMICONDUCTOR LLC
- Current Assignee Address: US NY Hauppauge
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L21/329
Abstract:
A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more lightly doped than the substrate. A second layer having a second type of conductivity is formed on the substrate and a metal layer is disposed over the second layer. The second layer is lightly doped so that a Schottky contact is formed between the metal layer and the second layer. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.
Public/Granted literature
- US08816468B2 Schottky rectifier Public/Granted day:2014-08-26
Information query
IPC分类:
