发明申请
US20120098124A1 SEMICONDUCTOR DEVICE HAVING UNDER-BUMP METALLIZATION (UBM) STRUCTURE AND METHOD OF FORMING THE SAME
审中-公开
具有底层金属化（UBM）结构的半导体器件及其形成方法
- 专利标题： SEMICONDUCTOR DEVICE HAVING UNDER-BUMP METALLIZATION (UBM) STRUCTURE AND METHOD OF FORMING THE SAME
- 专利标题（中）： 具有底层金属化（UBM）结构的半导体器件及其形成方法
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申请号： US13033780申请日： 2011-02-24
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公开(公告)号： US20120098124A1公开(公告)日： 2012-04-26
- 发明人: Yi-Wen WU , Hung-Jui KUO , Chien Ling HWANG , Chung-Shi LIU
- 申请人： Yi-Wen WU , Hung-Jui KUO , Chien Ling HWANG , Chung-Shi LIU
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L21/28
摘要：
A semiconductor device has a UBM (under-bump metallization) structure underlying and electrically connected to a solder bump. The UBM structure has a first metallization layer with a first cross-sectional dimension d1, a second metallization layer with a second cross-sectional dimension d2 formed on the first metallization layer, and a third metallization layer with a third cross-sectional dimension d3 formed on the second metallization layer, in which d1 is greater than d3, and d3 is greater than d2.
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