发明申请
US20120099389A1 MEMORY CIRCUITS, SYSTEMS, AND MODULES FOR PERFORMING DRAM REFRESH OPERATIONS AND METHODS OF OPERATING THE SAME
有权
用于执行DRAM刷新操作的记忆电路,系统和模块及其操作方法
- 专利标题: MEMORY CIRCUITS, SYSTEMS, AND MODULES FOR PERFORMING DRAM REFRESH OPERATIONS AND METHODS OF OPERATING THE SAME
- 专利标题(中): 用于执行DRAM刷新操作的记忆电路,系统和模块及其操作方法
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申请号: US13236972申请日: 2011-09-20
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公开(公告)号: US20120099389A1公开(公告)日: 2012-04-26
- 发明人: Chul-woo PARK , Young-hyun Jun , Joo-sun Choi , Hong-sun Hwang
- 申请人: Chul-woo PARK , Young-hyun Jun , Joo-sun Choi , Hong-sun Hwang
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2010-0102515 20101020
- 主分类号: G11C11/402
- IPC分类号: G11C11/402 ; G11C29/00 ; G11C7/00
摘要:
A memory module can include a plurality of dynamic memory devices that each can include a dynamic memory cell array with respective regions therein, where the plurality of dynamic memory devices can be configured to operate the respective regions responsive to a command. A DRAM management unit can be on the module and coupled to the plurality of dynamic memory devices, and can include a memory device operational parameter storage circuit that is configured to store memory device operational parameters for the respective regions to affect operation of the respective regions responsive to the command.
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