发明申请
- 专利标题: TERNARY METAL ALLOYS WITH TUNABLE STOICHIOMETRIES
- 专利标题(中): 具有可控硅的三次金属合金
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申请号: US12911585申请日: 2010-10-25
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公开(公告)号: US20120100308A1公开(公告)日: 2012-04-26
- 发明人: Robert B. Milligan , Dong Li , Steven Marcus
- 申请人: Robert B. Milligan , Dong Li , Steven Marcus
- 申请人地址: US AZ Phoenix
- 专利权人: ASM America, Inc.
- 当前专利权人: ASM America, Inc.
- 当前专利权人地址: US AZ Phoenix
- 主分类号: H05H1/42
- IPC分类号: H05H1/42 ; B05C11/00
摘要:
Methods and equipment for forming ternary metal alloys are provided. In some embodiments, TaCN thin films are deposited by exposing a substrate to alternating pulses of an organometallic tantalum precursor comprising nitrogen and carbon and hydrogen plasma. The stoichiometry of the film is tuned from carbon rich to nitrogen rich by adjusting the plasma parameters, particularly the plasma power and duration. In this way, films with varied characteristics can be formed from the same precursor. For example, both n-type and p-type materials can be deposited in the same module using the same precursor.