发明申请
US20120104360A1 STRAIN COMPENSATED SHORT-PERIOD SUPERLATTICES ON SEMIPOLAR OR NONPOLAR GAN FOR DEFECT REDUCTION AND STRESS ENGINEERING
审中-公开
用于缺陷减少和应力工程的二极管或非燃烧棒的应变补偿短周期监测
- 专利标题： STRAIN COMPENSATED SHORT-PERIOD SUPERLATTICES ON SEMIPOLAR OR NONPOLAR GAN FOR DEFECT REDUCTION AND STRESS ENGINEERING
- 专利标题（中）： 用于缺陷减少和应力工程的二极管或非燃烧棒的应变补偿短周期监测
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申请号： US13284449申请日： 2011-10-28
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公开(公告)号： US20120104360A1公开(公告)日： 2012-05-03
- 发明人: Matthew T. Hardy , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Matthew T. Hardy , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/20
摘要：
An (AlInGaN) based semiconductor device, comprising a first layer that is a semipolar or nonpolar nitride (AlInGaN) layer having a lattice constant that is partially or fully relaxed, deposited on a substrate or a template, wherein there are one or more dislocations at a heterointerface between the first layer and the substrate or the template; one or more strain compensated layers on the first layer, for defect reduction and stress engineering in the device, that is lattice matched to a larger lattice constant of the first layer; and one or more nonpolar or semipolar (AlInGaN) device layers on the strain compensated layers.
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