发明申请
- 专利标题: THIN FILM TRANSISTOR ARRAY PANEL AND THE METHOD FOR MANUFACTURING THEREOF
- 专利标题(中): 薄膜晶体管阵列及其制造方法
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申请号: US13034583申请日: 2011-02-24
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公开(公告)号: US20120104392A1公开(公告)日: 2012-05-03
- 发明人: Ock-Soo SON , Jeong-Uk HEO , Yeon-Sik HAM , Yeon-Mun JEON , Jeong-Hyun LEE
- 申请人: Ock-Soo SON , Jeong-Uk HEO , Yeon-Sik HAM , Yeon-Mun JEON , Jeong-Hyun LEE
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2010-0108184 20101102
- 主分类号: H01L33/08
- IPC分类号: H01L33/08 ; H01L33/16
摘要:
Provided is a thin film transistor array panel that includes: a substrate; a gate line and a data line formed on the substrate and at least partially defining a pixel area; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor and formed in the pixel area; a first common electrode formed under the pixel electrode; a second common electrode formed on the pixel electrode. The pixel area includes an upper pixel area and a lower pixel area, the first common electrode is formed in the upper pixel area, and the second common electrode is formed in the lower pixel area. The pixel electrode includes an upper pixel electrode formed in the upper pixel area and a lower pixel electrode formed in the lower pixel area.
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