发明申请
US20120105124A1 SEMICONDUCTOR APPARATUS, METHOD FOR DELAYING SIGNAL THEREOF, STACKED SEMICONDUCTOR MEMORY APPARATUS, AND METHOD FOR GENERATING SIGNAL THEREOF 有权
半导体装置,其延迟信号的方法,堆叠式半导体存储装置及其信号生成方法

  • 专利标题: SEMICONDUCTOR APPARATUS, METHOD FOR DELAYING SIGNAL THEREOF, STACKED SEMICONDUCTOR MEMORY APPARATUS, AND METHOD FOR GENERATING SIGNAL THEREOF
  • 专利标题(中): 半导体装置,其延迟信号的方法,堆叠式半导体存储装置及其信号生成方法
  • 申请号: US12970882
    申请日: 2010-12-16
  • 公开(公告)号: US20120105124A1
    公开(公告)日: 2012-05-03
  • 发明人: Heat Bit PARKKee Teok Park
  • 申请人: Heat Bit PARKKee Teok Park
  • 申请人地址: KR Ichon-shi
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Ichon-shi
  • 优先权: KR10-2010-0106880 20101029
  • 主分类号: H03H11/26
  • IPC分类号: H03H11/26
SEMICONDUCTOR APPARATUS, METHOD FOR DELAYING SIGNAL THEREOF, STACKED SEMICONDUCTOR MEMORY APPARATUS, AND METHOD FOR GENERATING SIGNAL THEREOF
摘要:
The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.
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