发明申请
- 专利标题： Adaptive Control of Programming Currents for Memory Cells
- 专利标题（中）： 用于存储单元编程电流的自适应控制
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申请号： US12915310申请日： 2010-10-29
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公开(公告)号： US20120106259A1公开(公告)日： 2012-05-03
- 发明人: Yue-Der Chih , Ping Wang , Cheng-Hsiung Kuo
- 申请人： Yue-Der Chih , Ping Wang , Cheng-Hsiung Kuo
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G11C16/06
- IPC分类号： G11C16/06 ; G11C16/04
摘要：
A method includes performing a first programming operation on a plurality of memory cells in a same programming cycle; and performing a verification operation on the plurality of memory cells to find failed memory cells in the plurality of memory cells, wherein the failed memory cells are not successfully programmed in the first programming operation; and performing a second programming operation on the failed memory cells. Passed memory cells successfully programmed in the first programming operation are not programmed in the second programming operation.
公开/授权文献
- US08391073B2 Adaptive control of programming currents for memory cells 公开/授权日：2013-03-05
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